Performance of 850 nm AlGaAs/GaAs implanted VCSELs utilizing silicon implantation induced disordering

Fang I. Lai, Tao Hung Hsueh, Ya Hsien Chang, Wen Chun Shu, Li Hung Lai, Hao-Chung Kuo*, S. C. Wang

*Corresponding author for this work

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

In this paper, we report a novel implanted vertical surface emitting lasers (VCSELs) utilizing silicon implantation induced disordering. The VCSELs exhibit kink-free current-light output performance with threshold currents ∼2.4 mA, and the slope efficiencies ∼0.45 W/A. The threshold current change with temperature is minimal and the slope efficiency drops less than ∼30% when the substrate temperature is raised to 90 °C. The eye diagram of VCSEL operating at 2.125 Gb/s with 7 mA bias and 10 dB extinction ratio shows very clean eye with jitter less than 30 ps. We have accumulated life test data up to 5000 h at 100 °C/20 mA with exceptional reliability and the WHTOL (high temperature and high humidity 85 °C/85 operating lifetime) biased at 8 mA has passed over 2000 h.

Original languageEnglish
Pages (from-to)1805-1809
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number10
DOIs
StatePublished - 1 Oct 2003

Keywords

  • Disordering
  • Kink
  • Si implant
  • VCSEL

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