The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap Cgd and non-quasi-static effect are the main factors but scales much slower than Lg.
|Number of pages||4|
|Journal||Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium|
|State||Published - 1 Jan 2000|
|Event||2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Boston, MA, USA|
Duration: 11 May 2000 → 13 Jun 2000