Performance limiting factors as RF MOSFETs scaling down

Y. H. Wu*, Albert Chin, C. S. Liang, C. C. Wu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

24 Scopus citations

Abstract

The measured RF performance of 0.5, 0.25, and 0.18 μm MOSFETs gradually saturates as scaling down, which can be explained by the derived analytical equation and simulation. The overlap Cgd and non-quasi-static effect are the main factors but scales much slower than Lg.

Original languageEnglish
Pages (from-to)151-154
Number of pages4
JournalDigest of papers - IEEE Radio Frequency Integrated Circuits Symposium
DOIs
StatePublished - 1 Jan 2000
Event2000 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Boston, MA, USA
Duration: 11 May 200013 Jun 2000

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