@inproceedings{d2223e4e86124e31bf48f98668027fe0,
title = "Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma",
abstract = "Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.",
author = "Kow-Ming Chang and Huang, {Sung Hung} and Tseng, {Yi Wen}",
year = "2011",
month = dec,
day = "1",
doi = "10.1149/1.3641391",
language = "English",
isbn = "9781607682790",
series = "ECS Transactions",
number = "19",
pages = "1--9",
booktitle = "Organic Semiconductor Materials, Devices, and Processing 3",
edition = "19",
note = "null ; Conference date: 01-05-2011 Through 06-05-2011",
}