Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma

Kow-Ming Chang; Sung Hung Huang; Yi Wen Tseng

doi:10.1149/1.3641391

Performance improvement of pentacene-based organic thin-film transistor with HfO ₂ gate dielectrics treated by CF ₄ plasma

Kow-Ming Chang^*, Sung Hung Huang, Yi Wen Tseng

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Fluorine incorporation into the HfO ₂ gate dielectrics by post CF ₄ plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO ₂ dielectric treated by CF ₄ plasma was characterized and then utilized in pentacene-based OTFTs. After CF ₄ plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO ₂ by CF ₄ plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm ²/Vs) and an on/off current ratio (>10 ⁴) were obtained.

Original language	English
Title of host publication	Organic Semiconductor Materials, Devices, and Processing 3
Pages	1-9
Number of pages	9
Edition	19
DOIs	https://doi.org/10.1149/1.3641391
State	Published - 1 Dec 2011
Event	Organic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting - Montreal, QC, Canada Duration: 1 May 2011 → 6 May 2011

Publication series

Name	ECS Transactions
Number	19
Volume	35
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Organic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting
Country	Canada
City	Montreal, QC
Period	1/05/11 → 6/05/11

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title = "Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma",

abstract = "Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.",

author = "Kow-Ming Chang and Huang, {Sung Hung} and Tseng, {Yi Wen}",

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Chang, K-M, Huang, SH & Tseng, YW 2011, Performance improvement of pentacene-based organic thin-film transistor with HfO ₂ gate dielectrics treated by CF ₄ plasma. in Organic Semiconductor Materials, Devices, and Processing 3. 19 edn, ECS Transactions, no. 19, vol. 35, pp. 1-9, Organic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting, Montreal, QC, Canada, 1/05/11. https://doi.org/10.1149/1.3641391

Performance improvement of pentacene-based organic thin-film transistor with HfO ₂ gate dielectrics treated by CF ₄ plasma. / Chang, Kow-Ming; Huang, Sung Hung; Tseng, Yi Wen.

Organic Semiconductor Materials, Devices, and Processing 3. 19. ed. 2011. p. 1-9 (ECS Transactions; Vol. 35, No. 19).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.

AB - Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.

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