Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma

Kow-Ming Chang*, Sung Hung Huang, Yi Wen Tseng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

Fluorine incorporation into the HfO 2 gate dielectrics by post CF 4 plasma treatment in an inductively coupled plasma chamber was proposed to improve gate leakage current and modify surface property for low-temperature fabrication. During the whole process, the temperature is controlled below 150°C. The low-leakage HfO 2 dielectric treated by CF 4 plasma was characterized and then utilized in pentacene-based OTFTs. After CF 4 plasma treatment, the gate leakage and field effect mobility were effectively improved. By integrating high-k HfO 2 by CF 4 plasma treatment and HMDS evaporation treatment, a low operating voltage (-4V), low threshold voltage (-1.12V), a low subthreshold swing (266 mV/decade), a field-effect mobility (0.029cm 2/Vs) and an on/off current ratio (>10 4) were obtained.

Original languageEnglish
Title of host publicationOrganic Semiconductor Materials, Devices, and Processing 3
Pages1-9
Number of pages9
Edition19
DOIs
StatePublished - 1 Dec 2011
EventOrganic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting - Montreal, QC, Canada
Duration: 1 May 20116 May 2011

Publication series

NameECS Transactions
Number19
Volume35
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceOrganic Semiconductor Materials, Devices, and Processing 3 - 219th ECS Meeting
CountryCanada
CityMontreal, QC
Period1/05/116/05/11

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    Chang, K-M., Huang, S. H., & Tseng, Y. W. (2011). Performance improvement of pentacene-based organic thin-film transistor with HfO 2 gate dielectrics treated by CF 4 plasma. In Organic Semiconductor Materials, Devices, and Processing 3 (19 ed., pp. 1-9). (ECS Transactions; Vol. 35, No. 19). https://doi.org/10.1149/1.3641391