Performance improvement of nickel salicided n-type metal oxide semiconductor field effect transistors by nitrogen implantation

Tien-Sheng Chao*, Liang Yao Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Nitrogen implantation was used to improve the performance of Ni-salicide process for n-type metal oxide semiconductor field effect transistors (MOSFETs). It is found that the driving current and transconductance of nMOSFETs increase with the nitrogen implantation. The hot carrier degradation of the nMOSFETs is significantly reduced as the nitrogen dosage increases.

Original languageEnglish
Pages (from-to)L381-L383
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number4 A
DOIs
StatePublished - 1 Apr 2002

Keywords

  • Nickel
  • Nitrogen implant
  • Salicide

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