Performance improvement in RF LDMOS transistors using wider drain contact

Kun Ming Chen, Bo Yuan Chen, Chia Sung Chiu, Guo Wei Huang, Chun Hao Chen, Horng-Chih Lin, Tiao Yuan Huang, Ming Yi Chen, Yu Chi Yang, Brenda Jaw, Kai Li Wang

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


In this letter, we proposed a new layout structure for RF laterally diffused metal-oxide-semiconductor (LDMOS) transistors. In a multifinger layout, the drain contact region was designed to be wider than the channel region. The wider drain increases the equivalent drift region width to reduce the drift resistance and suppress the quasi-saturation effect. We found that the wide-drain multifinger LDMOS devices have lower on-resistance, higher cutoff frequency, higher maximum oscillation frequency, and better power performances than the standard multifinger ones.

Original languageEnglish
Article number6566056
Pages (from-to)1085-1087
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 29 Jul 2013


  • Drain contact
  • laterally diffused metal-oxide-semiconductor (LDMOS)
  • multifinger layout
  • resistance
  • RF transistor

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