In this study, we present the fabrication and characterization of InGaSb/AlSb p-channel high-hole-mobility-transistor devices using inductively coupled plasma (ICP) etching with BCl3 gas. Devices fabricated by the dry etching technique show good DC and RF performances. Radiofrequency (RF) performance for devices with different source-to-drain spacing (LSD) and gate length (Lg) were investigated. The fabricated 80-nmgate- length p-channel device with 2-μm LSD exhibited a maximum drain current of 86.2mA/mm with peak transconductance (gm) of 64.5mS/mm. The current gain cutoff frequency ( fT) was measured to be 15.8 GHz when the device was biased at VDS = -1.2 V and VGS = 0.4 V.