Performance enhancement of the nMOSFET low-noise amplifier by package strain

W. C. Hua*, H. L. Chang, T. Wang, C. Y. Lin, C. P. Lin, S. S. Lu, Chin-Chun Meng, C. W. Liu

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The package strain improves the noise figure (NF) of the low-noise amplifier (LNA). The maximum noise reduction is ∼0.53 dB (13%) at the operating frequency of 2.4 GHz under the biaxial tensile strain of 0.037%. The NF reduction of the strained LNA is mainly due to the enhanced transconductance and cutoff frequency of the individual nMOSFET device under the same strain and bias conditions.

Original languageEnglish
Pages (from-to)160-162
Number of pages3
JournalIEEE Transactions on Electron Devices
Volume54
Issue number1
DOIs
StatePublished - 1 Jan 2007

Keywords

  • Biaxial strain
  • Cutoff frequency
  • Low-noise amplifier (LNA)
  • Noise factor
  • Noise figure (NF)
  • Package strain
  • Tensile
  • Transconductance

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    Hua, W. C., Chang, H. L., Wang, T., Lin, C. Y., Lin, C. P., Lu, S. S., Meng, C-C., & Liu, C. W. (2007). Performance enhancement of the nMOSFET low-noise amplifier by package strain. IEEE Transactions on Electron Devices, 54(1), 160-162. https://doi.org/10.1109/TED.2006.887194