Performance enhancement of Pt/ZnO/Pt resistive random access memory (RRAM) with UV-Ozone treatment

Der Long Chen, Hsin-Chieh Yu, Chih Chiang Yang, Yan Kuin Su, Cheng Wei Chou, Jian Long Ruan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

The bipolar resistive switching characteristics of the Pt/ZnO/Pt resistive random access memory (RRAM) had been investigated. This work introduced UV-Ozone treatment to improve the interface quality between ZnO thin film and Pt electrode. We found that UV-Oznoe can help to clean the surface of Pt electrode and provide superior surface morphology for the subsequent sputtering ZnO thin film deposition. According the experiment result, the Pt/ZnO/Pt RRAM demonstrated better on-off current ratio and the excellent retention time after UV-Ozone treatment.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages213-214
Number of pages2
ISBN (Electronic)9784990875312
DOIs
StatePublished - 15 Aug 2016
Event23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016 - Kyoto, Japan
Duration: 6 Jul 20168 Jul 2016

Publication series

NameProceedings of AM-FPD 2016 - 23rd International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference23rd International Workshop on Active-Matrix Flatpanel Displays and Devices, AM-FPD 2016
CountryJapan
CityKyoto
Period6/07/168/07/16

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