Performance enhancement of flip-chip packaged AlGaN/GaN HEMTs using active-region bumps-induced piezoelectric effect

Szu Ping Tsai, Heng-Tung Hsu, Che Yang Chiang, Yung Yi Tu, Chia Hua Chang, Ting En Hsieh, Huan Chung Wang, Shih Chien Liu, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC) bonded AlGaN/GaN high-electron mobility transistors in this letter. The bump patterns were designed and intended to provide different levels of tensile stress due to the mismatch in the coefficient of thermal expansion between the materials. After FC packaging, a maximum increase of 4.3% in saturation current was achieved compared with the bare die when proper arrangement of the bumps in active region was designed. In other words, a 17% improvement has been observed on the optimized bump pattern over the conventional bump pattern. To the best of our knowledge, this is the first letter that investigates the piezoelectric effect induced by FC bumps leading to the enhancement in device characteristics after packaging.

Original languageEnglish
Article number6823098
Pages (from-to)735-737
Number of pages3
JournalIEEE Electron Device Letters
Volume35
Issue number7
DOIs
StatePublished - 1 Jan 2014

Keywords

  • AlGaN/GaN
  • coefficient of thermal expansion (CTE)
  • flip-chip (FC)
  • high-electron mobility transistors (HEMTs)
  • tensile strain

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