Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Szu Ping Tsai; Heng-Tung Hsu; Joachim Wuerfl; Edward Yi Chang

doi:10.1109/TED.2016.2594043

Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Szu Ping Tsai, Heng-Tung Hsu^*, Joachim Wuerfl, Edward Yi Chang

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.

Original language	English
Article number	7534734
Pages (from-to)	3876-3881
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	63
Issue number	10
DOIs	https://doi.org/10.1109/TED.2016.2594043
State	Published - 1 Oct 2016

Keywords

AlGaN/GaN
flip-chip (FC) devices
high-electron-mobility transistors (HEMTs)
strain engineering
thermo-mechanical analysis

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10.1109/TED.2016.2594043

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title = "Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design",

abstract = "The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.",

keywords = "AlGaN/GaN, flip-chip (FC) devices, high-electron-mobility transistors (HEMTs), strain engineering, thermo-mechanical analysis",

author = "Tsai, {Szu Ping} and Heng-Tung Hsu and Joachim Wuerfl and Chang, {Edward Yi}",

year = "2016",

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language = "English",

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AU - Tsai, Szu Ping

AU - Hsu, Heng-Tung

AU - Wuerfl, Joachim

AU - Chang, Edward Yi

PY - 2016/10/1

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AB - The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.

KW - AlGaN/GaN

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