Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs by Strain Engineering Design

Szu Ping Tsai, Heng-Tung Hsu*, Joachim Wuerfl, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


The piezoelectric polarization of the AlGaN/GaN high-electron-mobility transistors (HEMTs) is strongly related to the strain state in the active area. Therefore, understanding the strain behavior inside the channel is crucial to the device electrical performance improvement of devices. This paper, for the first time, reveals the potential of optimizing flip-chip structures with active-region bumps to modulate the strain state of the AlGaN/GaN HEMT for enhancing the piezoelectric effect. The thermo-mechanical strain is observed to be affected by the physical dimensions and the material properties of the package. Thus, incorporating device strain engineering into packaging design will be very important for GaN devices due to their strong piezoelectric effects.

Original languageEnglish
Article number7534734
Pages (from-to)3876-3881
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
StatePublished - 1 Oct 2016


  • AlGaN/GaN
  • flip-chip (FC) devices
  • high-electron-mobility transistors (HEMTs)
  • strain engineering
  • thermo-mechanical analysis

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