Performance enhancement of excimer laser crystallized poly-Si thin film transistors with fluorine implantation technology

Chun Hao Tu, Ting Chang Chang*, Po-Tsun Liu, Che Yu Yang, Li Wei Feng, Yung Chun Wu, Simon M. Sze, Chun-Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Polycrystalline silicon thin film transistors (poly-Si TFTs) with the ion implantation of fluorine elements were investigated in this study. The electrical performance and reliability were reported comprehensively. Experimental work has shown the electrical characteristics of excimer laser crystallized F-ions-implanted poly-Si TFTs are improved effectively, especially for field effect mobility. It is also found that the fluorine piled up at the poly-Si interface during thermal annealing, for the TFT fabricated without a prior deposition of pad oxide. The stronger Si-F bonds replace the Si-Si/Si-H, leading to the superior electrical reliability. However, the dose of F ions is critical in poly-Si, or the electrical characteristics of TFT devices will be degraded.

Original languageEnglish
Pages (from-to)3128-3132
Number of pages5
JournalThin Solid Films
Volume516
Issue number10
DOIs
StatePublished - 31 Mar 2008

Keywords

  • Excimer laser crystallization
  • Fluorine
  • Poly-Si TFTs

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