Performance Enhancement for Tungsten-Doped Indium Oxide Thin Film Transistor by Hydrogen Peroxide as Cosolvent in Room-Temperature Supercritical Fluid Systems

Dun Bao Ruan, Po-Tsun Liu*, Min Chin Yu, Ta Chun Chien, Yu Chuan Chiu, Kai Jhih Gan, Simon M. Sze

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

In this study, hydrogen peroxide (H2O2) cosolvent, which was dissolved into supercritical-phase carbon dioxide fluid (SCCO2), is employed to passivate excessive oxygen vacancies of the high-mobility tungsten-doped indium oxide without any essential thermal process. With the detailed material analysis, the internal physical mechanism of the cosolvent effect or the interaction between the cosolvent solution and supercritical-phase fluid is well discussed. In addition, the optimized result has been applied for the thin film transistor device fabrication. As a result, the device with SCCO2 + H2O2 treatment exhibits the lowest subthreshold swing of 82 mV/dec, the lowest interface trap density of 8.76 × 1011 eV-1 cm-2, the lowest hysteresis of 47 mV, and an excellent reliability and uniformity characteristic compared with any other control groups. Besides, an extremely high field-effect mobility of 98.91 cm2/V s can also be observed, while there is even a desirable positive shift for the threshold voltage. Notably, compared with the untreated sample, the highest on/off current ratio of 5.11 × 107 can be achieved with at least four orders of magnitude enhancement by this unique treatment.

Original languageEnglish
Pages (from-to)22521-22530
Number of pages10
JournalACS Applied Materials and Interfaces
Volume11
Issue number25
DOIs
StatePublished - 3 Jun 2019

Keywords

  • HO interface treatment
  • cosolvent effect
  • high-mobility thin film transistor
  • multilayer high κ insulator
  • room-temperature supercritical CO fluid
  • tungsten-doped indium oxide

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