Performance enhancement for strained HfCO2 nMOSFET with Contact Etch Stop Layer (CESL) under pulsed-IV measurement

Woei Cherng Wu*, Tien-Sheng Chao, Te Hsin Chiu, Jer Chyi Wang, Chao Sung Lai, Ma Ming-Wen, Wen Cheng Lo, Yi Hsun Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

High-performance CESL strained nMOSFET with HfO2 gate dielectrics has been successfully demonstrated in this work. It is found that, the transconductance (gm) and driving current (Ion) of the nMOSFETs increase 70% and 90%, respectively, of the increase of devices with a 300 nm capping nitride layer. A superior HfO2/Si interface for CESL-devices is observed, demonstrated by an obvious interface state density reduction (6.56×1011 to 9.85×l010 cm-2). Further, a roughly 50% and 60% increase of gm and Ion; respectively, can be achieved for the 300 nm SiN-capped HfO2 nMOSFET without considering charge trapping under pulsed-IV measurement.

Original languageEnglish
Title of host publicationIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
Pages161-164
Number of pages4
DOIs
StatePublished - 1 Dec 2007
EventIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007 - Tainan, Taiwan
Duration: 20 Dec 200722 Dec 2007

Publication series

NameIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007

Conference

ConferenceIEEE Conference on Electron Devices and Solid-State Circuits 2007, EDSSC 2007
CountryTaiwan
CityTainan
Period20/12/0722/12/07

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