Performance enhancement by local strain in (110) channel n-channel metal-oxide-semiconductor field-effect transistors on (111) substrate

Wen Cheng Lo*, Ya Hsin Kuo, Yao Jen Lee, Tien-Sheng Chao, Chun Yen Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

In this study, an n-channel metal-oxide-semiconductor field-effect transistor (nMPSFET) fabricated with local strained channel techniques on a (111) Si substrate using a SiN capping layer with high mechanical stress and the stack gate of amorphous silicon (α-Si) and polycrystalline silicon (poly-Si) was investigated. By using these techniques, the performance improvement of the nMPSFETs in the (110) channel direction on the (111) substrate was achieved. The on-current and transconductance (Gm) increased with increasing SiN capping layer or α-Si layer thickness. Pur experimental results show that devices with a 700 Å α-Si layer show a 6.7% on-current improvement percentage relative to those with a 200 Å α-Si layer, and a corresponding Gm improvement percentage of 10.2%. In addition, charge pumping current/interface state density decreased for the samples with a thicker SiN layer.

Original languageEnglish
Pages (from-to)5715-5718
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number9 A
DOIs
StatePublished - 7 Sep 2007

Keywords

  • Charge pumping
  • Stack gate
  • Strain, (111) substrate

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