Performance comparison of titanium-oxide resistive switching memories using GeOx and AlOx capping layers for flexible application

Kun I. Chou, Chun Hu Cheng, Albert Chin*

*Corresponding author for this work

Research output: Contribution to journalArticle

2 Scopus citations

Abstract

To meet the requirements of flexible memory applications, we have compared two capping layers of GeOx and AlOx on a TiOy resistive random access memory (RRAM) at room temperature. A Ni/GeO x/TiOy/TaN RRAM shows a large resistance window of >102, 85 °C retention, a highresistance-state (HRS) activation energy (Ea) of 0.52 eV, and a good DC cycling of 103 cycles, which are significantly better than those of a Ni/ AlO x/TiOy/TaN RRAM, which has a high-defect-density dielectric of AlOx.

Original languageEnglish
Article number061502
JournalJapanese Journal of Applied Physics
Volume53
Issue number6
DOIs
StatePublished - 1 Jan 2014

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