Performance characterization of gallium nitride HEMT cascode switch for power conditioning applications

Po Chien Chou, Stone Cheng*

*Corresponding author for this work

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

A hybrid cascoded GaN switch configuration is demonstrated in power conversion applications. A novel metal package is proposed for the packaging of a D-mode GaN MIS-HEMT cascoded with an integrated power MOSFET and a SBD. The normally-off cascode circuit provides a maximum drain current of 14.6 A and a blocking capability of 600 V. Analysis of 200 V/1 A power conversion characteristics are discussed and show the excellent switching performance in load circuits. Switching characteristics of the integral SiC SBD are also demonstrated. Finally, a 48-to-96 V boost converter is used to evaluate the benefit of GaN cascode switches. These results show that high-voltage GaN-HEMTs can be switching devices for an ultralow-loss converter circuit.

Original languageEnglish
Pages (from-to)43-50
Number of pages8
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume198
DOIs
StatePublished - 1 Aug 2015

Keywords

  • DC-DC conversion
  • GaN cascade
  • HEMT
  • High voltage
  • Power semiconductor device

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