Performance characteristics of InGaAs/GaAs and GaAs/InGaAlAs coherently strained superlattice photodiodes

Utpal Das*, Yousef Zebda, Pallab Bhattacharya, Albert Chin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The properties of In0.24Ga0.76As/GaAs and GaAs/In0.05Ga0.58Al0.37As superlattice photodiodes grown by molecular beam epitaxy have been investigated. From the temporal response characteristics, deconvolved rise times ∼60-100 ps are obtained. The measured responsivities of the photodiodes with dark currents of 5-10 nA at 10 V are ∼0.4 A/W, which correspond to peak external quantum efficiencies of ∼60%. These results indicate that very high performance photodiodes can be realized with strained layers.

Original languageEnglish
Pages (from-to)1164-1166
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number15
DOIs
StatePublished - 1 Dec 1987

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