Analytical models on metal-oxide-semiconductor field-effect transistor (MOSFET) scaling and complementary (CMOS) ring oscillator performance developed recently are applied to revisit CMOS design guidelines because those based on the basic long channel model are obsolete. Handy and empirical equations for deep submicrometer MOSFET drain saturation current are developed. The differences between the basic long channel model and the accurate deep submicrometer MOSFET current model are highlighted. Design guidelines on V th and V dd scaling as well as interconnect loading effects based on the accurate models are presented.
- Deep submicrometer device
- Low-power CMOS