Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

Ray-Hua Horng*, D. S. Wuu, W. C. Peng, M. F. Huang, P. H. Liu, C. H. Seieh, K. C. Lin

*Corresponding author for this work

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

AlGaInP light emitting diode (LED) with a minor substrate has been successfully fabricated by wafer bonding. The bonding technique using a metallic interlayer has been developed to eliminate handling the fragile, flee-standing epilayers. Various structures of the mirror substrate have been studied, and a suitable structure of Au/AuBe/SiO2/Si is proposed. From the observation of the chip fabrication process, it was found that the SiO2 layer could isolate the stress causing from the Si substrate. The device performance of bonded LED is obviously far superior to that of the standard absorb-substrate LED. It exhibits normal p-n diode behavior with a low series resistance. Moreover, the emission wavelength of the bonded LED was independent of the injection current. The low forward series resistance and a good heat sink provided by Si substrate solve the joule heating inhering in conventional LED problem. Furthermore, the bonded LED with high reliability has been demonstrated.

Original languageEnglish
Pages (from-to)507-513
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
DOIs
StatePublished - 1 Jan 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 26 Jul 200028 Jul 2000

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