Performance and reliability of non-linear Al-Zn-Sn-O based resistive random access memory

Yang Shun Fan, Wei Liang Chan, Chih Hsiang Chang, Guang Ting Zheng, Che Chia Chang, Po-Tsun Liu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

The Al-doped zinc tin oxide based RRAM with non-linearity characteristic was demonstrated. The inhabit ratio (I.R.) of 34 was achieved by inserting ∼2nm Al 2 O 3 tunnel barrier to ensure the possible incorporation of RRAM cell into high density cross-type array structure. Furthermore, the reliability with endurance and retention are also examined.

Original languageEnglish
Title of host publicationProceedings of the 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages381-384
Number of pages4
ISBN (Electronic)9781479999286
DOIs
StatePublished - Jun 2015
Event22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015 - Hsinchu, Taiwan
Duration: 29 Jun 20152 Jul 2015

Publication series

NameProceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
Volume2015-August

Conference

Conference22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2015
CountryTaiwan
CityHsinchu
Period29/06/152/07/15

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