Performance and reliability of low-temperature polysilicon TFT with a novel stack gate dielectric and stack optimization using PECVD nitrous oxide plasma

Kow-Ming Chang*, Wen Chih Yang, Chiu Pao Tsai

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

This paper proposes a novel tetraethylorthosilicate (TEOS)/oxynitride stack gate dielectric for low-temperature poly-Si thin-film transistors, composed of a plasma-enhanced chemical vapor deposition (PECVD) thick TEOS oxide/ultrathin oxynitride grown by PECVD N2O plasma. The novel stack gate dielectric exhibits a very high electrical breakdown field of 8.5 MV/cm, which is approximately 3 MV/cm higher than traditional PECVD TEOS oxide. The novel stack oxide also has better interface quality, lower bulk-trap density, and higher long-term reliability than PECVD TEOS dielectrics. These improvements are attributed to the formation of strong Si ≡ N bonds of high quality ultra-thin oxynitride grown by PECVD N2O plasma, and the reduction in the trap density at the oxynitride/poly-Si interface.

Original languageEnglish
Pages (from-to)63-67
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number1
DOIs
StatePublished - 1 Jan 2004

Keywords

  • Dielectric films
  • Gate oxide
  • Nitrous oxide plasma
  • Polycrystalline-silicon thin-film transistor (polysilicon TFT)
  • Reliability

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