Performance and reliability of asymmetric LDD devices and logic gates

Jone F. Chen*, Jiang Tao, Peng Fang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

The performance and reliability of NMOSFET asymmetric LDD devices (with no LDD on the source side) are compared with that of conventional LDD devices. Asymmetric LDD devices exhibit higher Idsat and larger Isub. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric LDD devices are also simulated and compared.

Original languageEnglish
Pages (from-to)533-536
Number of pages4
JournalProceedings of the Custom Integrated Circuits Conference
DOIs
StatePublished - 1 Jan 1998
EventProceedings of the 1998 IEEE Custom Integrated Circuits Conference - Santa Clara, CA, USA
Duration: 11 May 199814 May 1998

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