Performance and reliability evaluations of p-channel flash memories with different programming schemes

Steve S. Chung*, S. N. Kuo, C. M. Yih, Tien-Sheng Chao

*Corresponding author for this work

Research output: Contribution to journalConference article

17 Scopus citations

Abstract

In this paper, a complete study of the cell reliability based on a unique oxide damage characterization for two different programming schemes of p-channel flash cell will he presented. These two programming schemes are Channel Hot Electron (CHE) injection or Band-to-Band (BTB) tunneling induced hot electron injection. Degradation of memory cells after P/E cycles due to the above oxide damages has been identified. It was found that both Nit and Qox will dominate the device degradation during programming. Although p-flash cell has high speed performance by comparing with n-flash cell, extra efforts are needed for designing reliable p-channel flash cell by appropriate drain engineering or related device optimization.

Original languageEnglish
Pages (from-to)295-298
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting, IEDM
DOIs
StatePublished - 1 Dec 1997
Event1997 International Electron Devices Meeting - Washington, DC, USA
Duration: 7 Dec 199710 Dec 1997

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