Performance and Reliability Comparison between Asymmetric and Symmetric LDD Devices and Logic Gates

Jone F. Chen*, Jiang Tao, Peng Fang, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The performance and reliability of NMOSFET asymmetric lightly doped drain (LDD) devices (with no LDD on the source side) are compared with those of conventional LDD devices. At a fixed Vdd, asymmetric LDD devices exhibit higher Idsat and shorter hot-carrier lifetime. To maintain the same hot-carrier lifetime, asymmetric LDD devices must operate at lower Vdd while higher Idsat is retained. For the same hot-carrier lifetime, ring oscillators with NMOSFET asymmetric LDD devices can achieve 5% (10% if PMOSFET also had asymmetric LDD) higher speed and 10% lower power. The hot-carrier reliability of inverter, NAND, and NOR structures with asymmetric and conventional LDD devices is also simulated and compared.

Original languageEnglish
Pages (from-to)367-371
Number of pages5
JournalIEEE Journal of Solid-State Circuits
Volume34
Issue number3
DOIs
StatePublished - 1 Dec 1999

Keywords

  • Hot carriers
  • Integrated circuit reliability
  • Semiconductor device reliability

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