Pentacene phototransistor with gate voltage independent responsivity and sensitivity by small silver nanoparticles decoration

S. H. Yuan, Z. Pei*, H. C. Lai, Pei-Wen Li, Y. J. Chan

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

In this study, a Pentacene phototransistor (PT) decorated with silver nanoparticles (Ag-NPs) in bottom gate structure was demonstrated. With the ultra-small Ag-NPs, this device exploits surface plasmon resonance at 445 nm and established a stable surface conduction channel under light illumination. Therefore, the PT exhibit gate voltage independent responsivity and photosensitivity in broad range of gate voltage. The light-induced magnetized in ultra-small Ag-NPs that generate polarized surface electrons were used to explain the gate-voltage independent photocurrent. The maximum photosensitivity and responsivity are 2.1 × 103 and 17.7 mA/W, respectively, under white-light illumination. They are enhanced around 25 times at gate voltage of 20 V than conventional phototransistor. This device may be used in flexible optical interactive display, white-light indoor communication, or optical sensors.

Original languageEnglish
Article number3244
Pages (from-to)7-11
Number of pages5
JournalOrganic Electronics
Volume27
DOIs
StatePublished - 1 Dec 2015

Keywords

  • Light-induced magnetized
  • Photosensitivity
  • Phototransistor
  • Responsivity
  • Silver nanoparticles

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