Pentacene-based organic phototransistor with high sensitivity to weak light and wide dynamic range

Hsiao-Wen Zan*, Shih Chin Kao, Shiang Ruei Ouyang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this letter, the channel length effect, combined with the photoelectric field effect of organic phototransistors, has been investigated for the first time. Reducing the channel length and applying a positive gate bias during illumination enhance electron trapping effectively and hence improve the photoresponsivity of a pentacene-based phototransistor. The sensing dynamic range and the photosensitivity to very weak light (in the range of microwatts per square centimeter) are also discussed through the interaction between deep trapped states, interface energy-band bending, and photoexcited electrons.

Original languageEnglish
Article number5393054
Pages (from-to)135-137
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number2
DOIs
StatePublished - 1 Feb 2010

Keywords

  • Channel length
  • Pentacene
  • Photoresponsivity
  • Phototransistor
  • Thin-film transistor (TFT)

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