Patterning of nanoscale Si lines using e-beam lithography and high-selectivity plasma etching

Fu Ju Hou, Horng-Chih Lin, Hsuen Li Chen, Jan Tsai Liu, Ching Te Pan, Fu-Hsiang Ko, Men Fang Wang, Tiao Yuan Huang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Patterning of nanoscale Si (<100 nm) lines is essential for nano Si device applications. In this work, electron-beam (e-beam) lithography with NEB-22 or hydrogen silsesquioxane (HSQ) resists was employed to generate nanoscale patterns. E-beam exposure was performed in a Leica Weprint 200 system. The measured linewidth was analysed as a function of dosage for different designed linewidths on NEB-22 and HSQ resist films. A linear relationship with roughly constant slope is observed for all cases. HSQ has the advantages of high contrast and small width fluctuation for thinner line width definition by e-beam lithography. Nevertheless, dosage up to several hundreds μC/cm 2 is too high, and may prevent HSQ from being used in practical applications.

Original languageEnglish
Title of host publication2002 International Microprocesses and Nanotechnology Conference, MNC 2002
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages120-121
Number of pages2
ISBN (Electronic)4891140313, 9784891140311
DOIs
StatePublished - 1 Jan 2002
EventInternational Microprocesses and Nanotechnology Conference, MNC 2002 - Tokyo, Japan
Duration: 6 Nov 20028 Nov 2002

Publication series

Name2002 International Microprocesses and Nanotechnology Conference, MNC 2002

Conference

ConferenceInternational Microprocesses and Nanotechnology Conference, MNC 2002
CountryJapan
CityTokyo
Period6/11/028/11/02

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