Patterning-free integration of polymer light-emitting diode and polymer transistor

Z. L. Li*, S. C. Yang, Hsin-Fei Meng, Y. S. Chen, Y. Z. Yang, C. H. Liu, S. F. Horng, Chain-Shu Hsu, L. C. Chen, J. P. Hu, R. H. Lee

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Scopus citations

Abstract

An integration of polymer light-emitting diode (LED) and polymer transistor was analyzed where no patterning of organic layers was required. For hole-transport layer (HTL) in polymer LED, an intrinsic high-mobility semiconducting conjugated polymer poly(3-hexylthiophene)(P3HT) was used. The light emission efficiency with conventional heavily doped HTL was slightly lower than LED. The brightness of 490 cd/m2 was achieved with maximum drain current of 3.6 μA for 100×100 μm active pixel LED.

Original languageEnglish
Pages (from-to)3558-3560
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number18
DOIs
StatePublished - 3 May 2004

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