Pattern Profile Distortion and Stress Evolution in Nanoporous Qrganosilicates after Photoresist Stripping

Po-Tsun Liu*, C. W. Chen, T. C. Chang, Tseung-Yuen Tseng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

Pattern profile distortion of nanoporous organosilicates has been investigated after pattern transfer processes. After photoresist stripping with O2-plasma ashing, many organic function groups are destroyed and sequentially transformed into siloxanol groups (Si-OH) in the nanoporous organosilicates. The interaction between siloxanol groups and the gelation reaction occurred in the internal porous organosilicates predominate stress evolution, leading to the deformation of patterned porous organosilicate films. This physical mechanism responsible for pattern distortion and stress evolution can be consistently confirmed through the residual stress vs. temperature measurement and Fourier transform infrared spectroscopy.

Original languageAmerican English
Pages (from-to)F5-F7
Number of pages3
JournalElectrochemical and Solid-State Letters
Volume7
Issue number2
DOIs
StatePublished - 8 Apr 2004

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