Passivation of SiO2/SiC interface with La2O3 capped oxidation

S. Munekiyo, Y. M. Lei, K. Natori, H. Iwai, T. Kawanago, K. Kakushima, K. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, M. Furuhashi, N. Miura, S. Yamakawa

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.

Original languageEnglish
Title of host publication2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages114-116
Number of pages3
ISBN (Electronic)9781479954933
DOIs
StatePublished - 20 Nov 2014
Event2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States
Duration: 13 Oct 201415 Oct 2014

Publication series

Name2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
CountryUnited States
CityKnoxville
Period13/10/1415/10/14

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