Passivation of SiO2/SiC interface with La2O3 capped oxidation

S. Munekiyo; Y. M. Lei; K. Natori; H. Iwai; T. Kawanago; K. Kakushima; K. Kataoka; A. Nishiyama; N. Sugii; H. Wakabayashi; K. Tsutsui; M. Furuhashi; N. Miura; S. Yamakawa

doi:10.1109/WiPDA.2014.6964636

Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation

S. Munekiyo, Y. M. Lei, K. Natori, H. Iwai, T. Kawanago, K. Kakushima, K. Kataoka, A. Nishiyama, N. Sugii, H. Wakabayashi, K. Tsutsui, M. Furuhashi, N. Miura, S. Yamakawa

International College of Semiconductor Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Thermal oxidation of SiC(0001) substrates with La₂O₃ capped annealing has been performed. La₂O₃ capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.

Original language	English
Title of host publication	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	114-116
Number of pages	3
ISBN (Electronic)	9781479954933
DOIs	https://doi.org/10.1109/WiPDA.2014.6964636
State	Published - 20 Nov 2014
Event	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 - Knoxville, United States Duration: 13 Oct 2014 → 15 Oct 2014

Publication series

Name	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

Conference

Conference	2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014
Country	United States
City	Knoxville
Period	13/10/14 → 15/10/14

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Munekiyo, S., Lei, Y. M., Natori, K., Iwai, H., Kawanago, T., Kakushima, K., Kataoka, K., Nishiyama, A., Sugii, N., Wakabayashi, H., Tsutsui, K., Furuhashi, M., Miura, N., & Yamakawa, S. (2014). Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014 (pp. 114-116). [6964636] (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDA.2014.6964636

Munekiyo, S. ; Lei, Y. M. ; Natori, K. ; Iwai, H. ; Kawanago, T. ; Kakushima, K. ; Kataoka, K. ; Nishiyama, A. ; Sugii, N. ; Wakabayashi, H. ; Tsutsui, K. ; Furuhashi, M. ; Miura, N. ; Yamakawa, S. / Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation. 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 114-116 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

@inproceedings{73838d2ffa574a42ac5c6e45900c1677,

title = "Passivation of SiO2/SiC interface with La2O3 capped oxidation",

abstract = "Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.",

author = "S. Munekiyo and Lei, {Y. M.} and K. Natori and H. Iwai and T. Kawanago and K. Kakushima and K. Kataoka and A. Nishiyama and N. Sugii and H. Wakabayashi and K. Tsutsui and M. Furuhashi and N. Miura and S. Yamakawa",

year = "2014",

month = nov,

day = "20",

doi = "10.1109/WiPDA.2014.6964636",

language = "English",

series = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "114--116",

booktitle = "2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014",

address = "United States",

note = "null ; Conference date: 13-10-2014 Through 15-10-2014",

}

Munekiyo, S, Lei, YM, Natori, K, Iwai, H, Kawanago, T, Kakushima, K, Kataoka, K, Nishiyama, A, Sugii, N, Wakabayashi, H, Tsutsui, K, Furuhashi, M, Miura, N & Yamakawa, S 2014, Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation. in 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014., 6964636, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Institute of Electrical and Electronics Engineers Inc., pp. 114-116, 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014, Knoxville, United States, 13/10/14. https://doi.org/10.1109/WiPDA.2014.6964636

Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation. / Munekiyo, S.; Lei, Y. M.; Natori, K.; Iwai, H.; Kawanago, T.; Kakushima, K.; Kataoka, K.; Nishiyama, A.; Sugii, N.; Wakabayashi, H.; Tsutsui, K.; Furuhashi, M.; Miura, N.; Yamakawa, S.

2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 114-116 6964636 (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Passivation of SiO2/SiC interface with La2O3 capped oxidation

AU - Munekiyo, S.

AU - Lei, Y. M.

AU - Natori, K.

AU - Iwai, H.

AU - Kawanago, T.

AU - Kakushima, K.

AU - Kataoka, K.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Wakabayashi, H.

AU - Tsutsui, K.

AU - Furuhashi, M.

AU - Miura, N.

AU - Yamakawa, S.

PY - 2014/11/20

Y1 - 2014/11/20

N2 - Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.

AB - Thermal oxidation of SiC(0001) substrates with La2O3 capped annealing has been performed. La2O3 capped oxidation has shown improvements in reduced hysteresis and interface state density (Dit) for MOS capacitors. La-silicate grains, agglomerated at the step bunches of SiC substrates, have been confirmed upon oxidation. We can anticipated that La-silicate grains are likely to passivate the charge trapping at step bunches and effectively suppresses the Dit.

UR - http://www.scopus.com/inward/record.url?scp=84918523303&partnerID=8YFLogxK

U2 - 10.1109/WiPDA.2014.6964636

DO - 10.1109/WiPDA.2014.6964636

M3 - Conference contribution

AN - SCOPUS:84918523303

T3 - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

SP - 114

EP - 116

BT - 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014

PB - Institute of Electrical and Electronics Engineers Inc.

Y2 - 13 October 2014 through 15 October 2014

ER -

Munekiyo S, Lei YM, Natori K, Iwai H, Kawanago T, Kakushima K et al. Passivation of SiO₂/SiC interface with La₂O₃ capped oxidation. In 2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 114-116. 6964636. (2nd IEEE Workshop on Wide Bandgap Power Devices and Applications, WiPDA 2014). https://doi.org/10.1109/WiPDA.2014.6964636