Passivation of gaas power field-effect transistor using electron cyclotron resonance chemical vapor deposition silicon nitride technique

Edward Yi Chang, Kun Chun Lin, Janne Wha Wu, Tzu Hung Chen, John Sea Chen, Sheng Ping Wang

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Monolithic microwave integrated circuit (MMIC) chips are typically passivated with dielectric films to improve their long-term environmental reliability. Improper passivation generally degrades chip performance and reduces wafer yield. This paper reports the change of metal-semiconductor field-effect transistor (MESFET) parameters after silicon nitride passivation using electron cyclotron resonance chemical vapor deposition (ECR-CVD). In general, the changes in the electrical parameters after passivation are small. Gate-drain breakdown voltage of the MESFET’s after ECR-CVD passivation is significantly improved compared to that after PECVD. The microwave characteristics of the high-powered MESFET’s passivated using ECR-CVD silicon nitride are also reported in this paper.

Original languageEnglish
Pages (from-to)L1659-L1661
JournalJapanese Journal of Applied Physics
Volume33
Issue number12 A
DOIs
StatePublished - 1 Jan 1994

Keywords

  • ECR-CVD
  • GaAs
  • MESFET

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