Passivation effect of Poly-Si thin-film transistors with fluorine-ion-implanted spacers

Wei Ren Chen, Ting Chang Chang*, Po-Tsun Liu, Chen Jung Wu, Chun Hao Tu, S. M. Sze, Chun Yeng Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

In this letter, polycrystalline silicon thin-film transistors (TFTs) consisting of lightly doped drain structure and fluorine-ion-implanted spacers were investigated for the passivation effect under the hot carrier stress. The dose and distribution of fluorine are exhibited by secondary ion mass spectrometry analysis. We could use this method to provide enough fluorine atoms to passivate the defects between the N- regime and the conduction channel. Moreover, the TFTs with fluorine-ion-implanted spacers have better electrical characteristics than the standard device for resisting the degradation effects of hot carrier, such as smaller degradation of transconductance, current crowding effect, and subthreshold slope.

Original languageEnglish
Pages (from-to)603-605
Number of pages3
JournalIEEE Electron Device Letters
Volume29
Issue number6
DOIs
StatePublished - 1 Jun 2008

Keywords

  • Fluorine passivation
  • Ion implantation
  • Polycrystalline silicon (poly-Si)
  • Spacer
  • Thin-film transistor (TFT)

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