Particle contaminations in LPCVD polysilicon

W. H. Chen, Tien-Sheng Chao, Y. N. Liu, T. F. Lei, K. S. Chou

Research output: Contribution to journalArticle

Abstract

Particle contamination of poly-Si films deposited in an LPCVD system was investigated by using the orthogonal array L8 experiment. Gas injection, temperature, pressure and flow rate were used as variable factors. The surfaces of samples were analysed by using SEM and AFM. Results indicated that the construction of the gas injection’ was the key parameter to suppress particle formation. Applying a multiple-hole injector at the back of the tube reduced these surface defects.

Original languageEnglish
Pages (from-to)239-241
Number of pages3
JournalElectronics Letters
Volume31
Issue number3
DOIs
StatePublished - 2 Feb 1995

Keywords

  • Chemical vapour deposition
  • Polysilicon

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    Chen, W. H., Chao, T-S., Liu, Y. N., Lei, T. F., & Chou, K. S. (1995). Particle contaminations in LPCVD polysilicon. Electronics Letters, 31(3), 239-241. https://doi.org/10.1049/el:19950114