Partial ordering and enhanced mobility in Ga 0.47 In 0.53 As grown on vicinal (110)InP

Albert Chin*, T. Y. Chang, A. Ourmazd, E. M. Monberg

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

Very high quality GaInAs/AlInAs modulation-doped heterostructures have been obtained by molecular beam epitaxy on InP oriented 6°off (110) towards the (111̄) pole. The results indicate partial ordering in the epitaxial layers and also suggest reduced background acceptor concentration. In spite of the high density of interface steps, the electron mobility obtained on the vicinal (110) substrate exceeds the state-of-the-art value obtained on (100) oriented substrates.

Original languageEnglish
Pages (from-to)968-970
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number9
DOIs
StatePublished - 1 Dec 1991

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