Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure

A. Ortiz-Conde*, A. D. Latorre Rey, W. Liu, W. C. Chen, Horng-Chih Lin, J. J. Liou, J. Muci, F. J. García-Sánchez

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A new double integration-based method to extract model parameters is applied to experimental polysilicon nanowire MOSFETs. The threshold voltage and Subthreshold Slope factor are extracted from noisy measured current-voltage characteristics. It is shown that the present method offers advantages over previous extraction procedures regarding data noise reduction. In addition, the normalized mutual integral difference operator method is scrutinized and an improvement of the method is presented.

Original languageEnglish
Pages (from-to)635-641
Number of pages7
JournalSolid-State Electronics
Volume54
Issue number6
DOIs
StatePublished - 1 Jun 2010

Keywords

  • Double integration
  • MOSFETs
  • Nanowire
  • Noise reduction
  • Parameter extraction
  • Polysilicon
  • Subthreshold Slope
  • Successive integration
  • Threshold voltage

Fingerprint Dive into the research topics of 'Parameter extraction in polysilicon nanowire MOSFETs using new double integration-based procedure'. Together they form a unique fingerprint.

Cite this