Parallel silicide contacts

I. Ohdomari*, King-Ning Tu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

189 Scopus citations

Abstract

Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current-voltage and capacitance-voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.

Original languageEnglish
Pages (from-to)3735-3739
Number of pages5
JournalJournal of Applied Physics
Volume51
Issue number7
DOIs
StatePublished - 1 Dec 1980

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