A two-stage 3.1-to 10.6-GHz ultrawideband CMOS low-noise amplifier (LNA) is presented. In our design, a parallel resistance-capacitance shunt feedback with a source inductance is proposed to obtain broadband input matching and to reduce the noise level effectively; furthermore, a parallel inductance- capacitance network at drain is drawn to further suppress the noise, and a very low noise level is achieved. The proposed LNA is implemented by the Taiwan Semiconductor Manufacturing Company 0.18μCMOS technology. Measured results show that the noise figure is 2.5-4.7 dB from 3.1 to 10.6 GHz, which may be the best result among previous reports in the 0.18-ìm CMOS 3.1-to 10.6-GHz ultrawideband LNA. The power gain is 10.9-13.9 dB from 3.1 to 10.6 GHz. The input return loss is below.9.4 dB from 3.1 to 15 GHz. It consumes 14.4 mW from a 1.4-V supply voltage and occupies an area of only 0.46 mm2.
|Number of pages||5|
|Journal||IEEE Transactions on Circuits and Systems II: Express Briefs|
|State||Published - 1 Aug 2010|
- complimentary metaloxidesemiconductor (CMOS) low-noise amplifier (LNA)
- ultrawideband (UWB)