Parallel 2D axisymmetric fluid modeling of CF4 discharge in an inductively coupled plasma source during SiO2 etching

Yuan Ming Chiu, Chung Hua Chiang, Chieh Tsan Hung, Meng Hua Hu, Jong-Shinn Wu*, Feng Nan Hwang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O2, are found to be appreciable (∼10%) compared to the precursor near the substrate. The predicted density trends, such as CFx + and CFx (x = 1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO 2 substrate is presented and discussed in detail. A numerical study demonstrates a successful framework of chamber-scale plasma processing employing detailed gas-phase and surface chemistry via high-performance parallel computing. The predicted densities in plasma are consistent with experiments and can be used to estimate the etching rate and uniformity for different kinds of operating conditions.

Original languageEnglish
Pages (from-to)366-390
Number of pages25
JournalPlasma Processes and Polymers
Volume11
Issue number4
DOIs
StatePublished - 1 Jan 2014

Keywords

  • fluid model
  • inductively coupled plasma (ICP)
  • parallel computing
  • surface model

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