A parallel 2D axisymmetric plasma fluid modeling for an inductively coupled plasma source with tetrafluoromethane precursor is reported. In total, 32 species with 96 gas-phase and 27 surface reactions with site-balance equations are considered. The predicted results of major species densities are in reasonable agreement with reported experiments. The etching products, e.g. SiFx and O2, are found to be appreciable (∼10%) compared to the precursor near the substrate. The predicted density trends, such as CFx + and CFx (x = 1-3), are also consistent with reported experiments. Finally, the predicted etching rate on the SiO 2 substrate is presented and discussed in detail. A numerical study demonstrates a successful framework of chamber-scale plasma processing employing detailed gas-phase and surface chemistry via high-performance parallel computing. The predicted densities in plasma are consistent with experiments and can be used to estimate the etching rate and uniformity for different kinds of operating conditions.
- fluid model
- inductively coupled plasma (ICP)
- parallel computing
- surface model