Paraffin wax passivation layer improvements in electrical characteristics of bottom gate amorphous indium-gallium-zinc oxide thin-film transistors

Geng Wei Chang, Ting Chang Chang*, Yong En Syu, Tsung Ming Tsai, Kuan Chang Chang, Chun Hao Tu, Fu Yen Jian, Ya Chi Hung, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

In this research, paraffin wax is employed as the passivation layer of the bottom gate amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs), and it is formed by sol-gel process in the atmosphere. The high yield and low cost passivation layer of sol-gel process technology has attracted much attention for current flat-panel-display manufacturing. Comparing with passivation-free a-IGZO TFTs, passivated devices exhibit a superior stability against positive gate bias stress in different ambient gas, demonstrating that paraffin wax shows gas-resisting characteristics for a-IGZO TFTs application. Furthermore, light-induced stretch-out phenomenon for paraffin wax passivated device is suppressed. This superior stability of the passivated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities.

Original languageEnglish
Pages (from-to)1608-1611
Number of pages4
JournalThin Solid Films
Volume520
Issue number5
DOIs
StatePublished - 30 Dec 2011

Keywords

  • Indium Gallium Zinc Oxide (IGZO)
  • Passivation layer
  • Thin film transistors (TFTs)

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