Pad characterization for CMOS technology using time domain reflectometry

C. S. Chiu, W. L. Chen, K. H. Liao, B. Y. Chen, Y. M. Teng, G. W. Huang, Lin-Kun Wu

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

6 Scopus citations

Abstract

The pad structure of CMOS technology is characterized by way of time domain reflectometry measurement. Using the on-wafer TDR measurement system, the capacitance of the pad in the CMOS process was extracted and estimated. Measured and simulated TDR data are also presented in this study. The capacitance is estimated when the curve is fitted by mathematical tool. This method is simple to use, and furthermore the results agree with data extracted from vector network analyzer.

Original languageEnglish
Title of host publication2008 IEEE International RF and Microwave Conference, RFM 2008
Pages215-217
Number of pages3
DOIs
StatePublished - 1 Dec 2008
Event2008 IEEE International RF and Microwave Conference, RFM 2008 - Kuala Lumpur, Malaysia
Duration: 2 Dec 20084 Dec 2008

Publication series

Name2008 IEEE International RF and Microwave Conference, RFM 2008

Conference

Conference2008 IEEE International RF and Microwave Conference, RFM 2008
CountryMalaysia
CityKuala Lumpur
Period2/12/084/12/08

Keywords

  • Capacitance
  • Impedance
  • On-wafer
  • Pad structure
  • Time domain reflectometry (TDR)

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