p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

D. K. Sengupta*, S. L. Jackson, D. Ahmari, Hao-Chung Kuo, J. I. Malin, S. Thomas, M. Feng, G. E. Stillman, Y. C. Chang, L. Li, H. C. Liu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.

Original languageEnglish
Pages (from-to)3209-3211
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number21
DOIs
StatePublished - 18 Nov 1996

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