Abstract
An oxide-confined holey light-emitting diode (LED) on p-type GaAs substrate in the 830 nm range is reported. The device is consisted of bottom DBR, quantum wells, and top DBR, with a holey structure for light extraction. The internally reflected spontaneous emission can be extracted out of the etched hole.
| Original language | English |
|---|---|
| Title of host publication | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 |
| Publisher | Optical Society of America |
| ISBN (Print) | 1424411742, 9781424411740 |
| State | Published - 1 Jan 2007 |
| Event | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 - Seoul, Korea, Republic of Duration: 26 Aug 2007 → 26 Aug 2007 |
Publication series
| Name | Optics InfoBase Conference Papers |
|---|---|
| ISSN (Electronic) | 2162-2701 |
Conference
| Conference | Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 |
|---|---|
| Country | Korea, Republic of |
| City | Seoul |
| Period | 26/08/07 → 26/08/07 |
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Cite this
Yang, H. P. D., Liu, J. N., Lai, F. I., Kuo, H-C., Xuan, R., & Chi, J. Y. (2007). P-substrate small-aperture holey light-emitting diodes for fiber-optic applications. In Conference on Lasers and Electro-Optics/Pacific Rim, CLEOPR 2007 (Optics InfoBase Conference Papers). Optical Society of America.