Hot-carrier-limited device lifetime of surface-channel p-MOSFETs (p-channel metal-oxide-semiconductor field-effect transistors) is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC (pulse) stress lifetime can be made based on DC stress data.
|Number of pages||4|
|State||Published - 1 Dec 1989|
|Event||International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers - Taipei, Taiwan|
Duration: 17 May 1989 → 19 May 1989
|Conference||International Symposium on VLSI Technology, Systems and Applications - Proceedings of Technical Papers|
|Period||17/05/89 → 19/05/89|