P-MOSFET gate current and device degradation

Tong Chern Ong*, Koichi Seki, Ping K. Ko, Chen-Ming Hu

*Corresponding author for this work

Research output: Contribution to conferencePaper

17 Scopus citations

Abstract

Hot-carrier-limited device lifetime of surface-channel p-MOSFETs is found to correlate well with gate current over a wide range of bias. The same result is not observed for buried-channel p-MOSFETs. A gate current model for surface-channel p-MOSFETs is presented. Using this gate current model, reasonable estimates of AC stress lifetime can be made based on DC stress data.

Original languageEnglish
Pages178-182
Number of pages5
DOIs
StatePublished - 1 Dec 1989
Event27th Annual Proceedings: Reliability Physics - 1989 -
Duration: 11 Apr 198911 Apr 1989

Conference

Conference27th Annual Proceedings: Reliability Physics - 1989
Period11/04/8911/04/89

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    Ong, T. C., Seki, K., Ko, P. K., & Hu, C-M. (1989). P-MOSFET gate current and device degradation. 178-182. Paper presented at 27th Annual Proceedings: Reliability Physics - 1989, . https://doi.org/10.1109/RELPHY.1989.36341