P-channel SONOS transient current modeling for program and erase

Pei Ying Du*, Jyh-Chyurn Guo, H. M. Lee, H. M. Chen, Rick Shen, C. C.H. Hsu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t -1 behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.

Original languageEnglish
Title of host publication2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages32-33
Number of pages2
DOIs
StatePublished - 1 Dec 2006
Event2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan
Duration: 24 Apr 200626 Apr 2006

Publication series

NameInternational Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan
CityHsinchu
Period24/04/0626/04/06

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  • Cite this

    Du, P. Y., Guo, J-C., Lee, H. M., Chen, H. M., Shen, R., & Hsu, C. C. H. (2006). P-channel SONOS transient current modeling for program and erase. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 32-33). [4016589] (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251116