AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.
|Number of pages||3|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Dec 2010|
|Event||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
Duration: 23 May 2010 → 28 May 2010