P-27: Novel AlNiLa serves as gate electrodes of a-TFT for AMLCD

Po-Tsun Liu*, Yi Teh Chou, Ting Hao Hsu, An Di Huang, Bing Mau Chen

*Corresponding author for this work

Research output: Contribution to journalArticle


AlNiLa metallization technology is introduced for AMLCD as gate electrodes. Ni can effectively prevent Al diffusing into Si-based layer while La can obviously increase uniformity during AlNiLa deposition than that of conventional Al-Nd alloy. According to the electrical measurement results, the compatibility of AlNiLa in TFT has been verified.

Original languageEnglish
Pages (from-to)1322-1324
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Issue number1
StatePublished - 1 Dec 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

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