Integration of surface state and geometry effects on high performance amorphous IGZO thin-film transistors

Li Wei Liu*, Yun Chu Tsai, Po-Tsun Liu, Han Ping D Shieh

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

The influence of surface state effects of a-IGZO TFTs is investigated and modeled by adopting two different structures. The inverted-staggered TFTs with the less surface state effects show both improved sub-threshold swing and stable performances compared to inverted-coplanar TFTs. Based on our result, the inverted-staggered structure is suitable as high-performance a-IGZO TFTs.

Original languageEnglish
Pages (from-to)1162-1165
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume42
Issue number1
DOIs
StatePublished - 1 Jun 2011
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 15 May 201120 May 2011

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