A three dimensional embedded optical sensor employs low temperature poly-silicon thin film transistor which used gate metal shielding by itself characteristics was proposed. This system provides sensing disparity characteristics of adopted devices under illumination. It's expected the integration of sensing system onto the panel without extra components sensors.
|Number of pages||4|
|Journal||Digest of Technical Papers - SID International Symposium|
|State||Published - 1 Dec 2010|
|Event||48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States|
Duration: 23 May 2010 → 28 May 2010