P-13: Using low temperature poly-silicon thin film transistor as oblique light sensors for 3D interaction display

Yan Fu Kuo*, Chih Jung Lin, Lu Sheng Chou, Ya-Hsiang Tai

*Corresponding author for this work

Research output: Contribution to journalArticle

Abstract

A three dimensional embedded optical sensor employs low temperature poly-silicon thin film transistor which used gate metal shielding by itself characteristics was proposed. This system provides sensing disparity characteristics of adopted devices under illumination. It's expected the integration of sensing system onto the panel without extra components sensors.

Original languageEnglish
Pages (from-to)1272-1275
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume41
Issue number1
DOIs
StatePublished - 1 Dec 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

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