P-102: Hysteresis suppression of thin-film transistors with poly (vinyl alcohol) insulator on flexible stainless steel substrate

Tse Hsien Lee*, Chen Ting Wu, Pei Yi Kao, Huang-Ming Chen, Jih Fon Huang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The Hysteresis effects can be suppressed in flexible thin-film transistors with poly (vinyl alcohol) insulator without crosslinking agent. The characteristic of hysteresis was greatly reduced by SiO2 nano-particle in PVA solution. The TFTs were fabricated by using a-IGZO as active layer at room temperature. The TFTs exhibited stable performance with field effect mobility (∼10.81 Vs/cm2), high on/off current ratios (∼106), and low threshold voltage (∼-1V) on planarized stainless steel substrate. The transfer curve which measured from various sweep ranges in two different sweep directions suggested that the hysteresis has been successfully suppressed.

Original languageEnglish
Pages (from-to)1633-1635
Number of pages3
JournalDigest of Technical Papers - SID International Symposium
Volume41 1
DOIs
StatePublished - 1 May 2010
Event48th Annual SID Symposium, Seminar, and Exhibition 2010, Display Week 2010 - Seattle, WA, United States
Duration: 23 May 201028 May 2010

Keywords

  • Flexible substrate
  • Hysteresis
  • In-Ga-Zn oxide (IGZO)
  • Poly (vinyl alcohol)
  • Thin-film transistor (TFT)

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