Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

Jin Yu Shiu*, Jui Chien Huang, Vincent Desmaris, Chia Ta Chang, Chung Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

32 Scopus citations

Abstract

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

Original languageEnglish
Pages (from-to)476-478
Number of pages3
JournalIEEE Electron Device Letters
Volume28
Issue number6
DOIs
StatePublished - 1 Jun 2007

Keywords

  • GaN
  • High electron mobility transistors (HEMTs)
  • Implantation
  • Power density
  • Pulsed I-V
  • Transient

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    Shiu, J. Y., Huang, J. C., Desmaris, V., Chang, C. T., Lu, C. Y., Kumakura, K., Makimoto, T., Zirath, H., Rorsman, N., & Chang, E. Y. (2007). Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs. IEEE Electron Device Letters, 28(6), 476-478. https://doi.org/10.1109/LED.2007.896904